摘 要：以纳米压印光栅制作为基础，研究了适应纳米压印工艺的对接生长材料结构及生长工艺，生长的材料均匀性好，适合后续器件工艺制作。通过理论设计及实验研究，优化了浅刻蚀有源波导及深刻蚀无源波导的变换结构，降低了器件的转换损耗及回波损耗。结合后续制作的器件，对接界面插入损耗可以小于1.5 dB。 完成了多种多波长阵列DFB激光器及高性能DFB激光器的制作，包括16通道200 GHz，300 GHz间隔1550 nm波段阵列激光器，4通道20 nm间隔1310 nm波段阵列激光器，双八分之一相移激光器，非对称三相移激光器，变节距啁啾调制激光器等，广泛的验证了压印工艺的可靠性及适应性。研究了阵列器件的热调谐特性及热串扰特性，取得了器件热特性数据。为下一步编写阵列器件波长控制程序取得了实验数据。依据2012年度InP基AWG测试结果，对AWG的结构设计数据进行了修正并重新设计。修正设计后制作的通道波长间隔为1.56 nm，通道中心波长1549.7 nm，串扰小于1.5dB。完成了四通道阵列激光器与多模干涉结构合波器（MMI）的单片集成芯片的设计、制作与测试， 针对集成芯片完成了器件的封装设计。由于集成芯片管脚非常多，直流偏置，微波信号，热调谐信号互相之间存在耦合，串扰，布线交叉等。为此采用了多层过渡板结构，有效的将各个管脚分开，降低电学串扰。搭建芯片测试平台系统。完成了多波长半导体微环激光器的的制备与测试，采用InP基多量子阱激光器外延材料结构，利用感应耦合等离子体（ICP）干法刻蚀技术和SiO2钝化工艺，研制了基于环形谐振腔的双波长半导体激光器样品，实现了激光光源的单片集成。改变激光器的注入电流，可调节峰值波长与波长间隔。对InP基长波长10 Gb/s 单片集成OEIC光接收机进行了电路建模、共基极和共发射极OEIC集成电路设计、制备与测试，跨组放大器达到10 Gb/s传输速率，PIN探测器带宽实现7.8 GHz，OEIC器件传输速率达到4 Gb/s，眼图清晰。探索了Si基准单片光发射OEIC方案的可行性。该方案是在Si片衬底上湿法腐蚀出沟槽，并在沟槽里溅射金属层，将FP激光器芯片贴装在沟槽里，通过金属层将电极引出，与Si CMOS 激光驱动电路实现准单片集成。 关键词：光子集成芯片 多波长微环激器 多波长阵列激光器 InP基长波长10 Gb/s单片集成OEIC光接收机 纳米压印 Abstract：The coupling efficiency and return loss between deep ridge waveguide and shallow ridge waveguide has been analyzed theoretically，an improved structure with taper has been proposed and fabricated. The result of the made-up device indicates that the insert loss on the butt-joint interface is less than 1.5 dB. Various kinds of multi-wavelength laser array and high-performance DFB lasers has been fabricated which confirmed that the nanoimprint technology is flexible enough for a range of abilities. The thermal tuning and thermal crosstalk attributes are studied which could be used to control the wavelength tuning of the laser array. Modification and redesigning on AWG is proceed based on the test result of the device fabricated in last year. The new device according to the modified design shows the result 1.56 nm wavelength interval and centre wavelength 1 549.7 nm which meet the 200 GHz c-band standard. The design， fabrication and test of the monolithic chip of four channel laser array integrated with MMI combiner are completed. The packing design of the chip is also finish. As there are too many pins of the monolithic chip of which the DC offset， the microwave signal， thermal tuning signal would bring in coupling， crosstalk wiring cross effects each other if use the single layer board， the multilayer transition board is employed to separate the pins， reduce the electrical crosstalk. The chip test platform is also established for this device. The fabrication and test of the dual wavelength semiconductor laser based on micro-ring is also accomplished， which introduce the InP MQW laser wafer， adopt ICP dry etch and SiO2 passivation technology. The sample achieved laser monolithic. The peak wavelength and wavelength interval can be tuned by turn the injection current of this laser. The circuit modeling of the 10 GB/s monolithic OEIC optical receiver based on the InP material is studied. The common base and common emitter OEIC is designed， fabricated and tested. The transmission speed of the TIA is reached 10 GB/s， the bandwidth of the PIN 7.8 G Hz， and the transmission speed of the OEIC component reached 4 GB/s. The eye pattern is clear. The practicality of the quasi monolithic OEIC transmitter based on Si is also explored. We can sputter metal on the ditch corroded by wet etch on Si，and mount the FP laser chip on it. By wiring the electrode to the Si substrate， the quasi monolithic integrated with the Si CMOS laser driver circuit could be achieved. Key Words：Photonic integrated circuit；Multi-wavelength micro-ring laser；Multi-wavelength semiconductor laser Array 10Gb/s monolithic integrated OEIC receiver based on InP nanoimprint technology butt-joint；Array waveguide gratings 阅读全文链接（需实名注册）：http：//www.nstrs.cn/xiangxiBG.aspx？id=49360&flag=1
摘 要：以纳米压印光栅制作为基础，研究了适应纳米压印工艺的对接生长材料结构及生长工艺，生长的材料均匀性好，适合后续器件工艺制作。通过理论设计及实验研究，优化了浅刻蚀有源波导及深刻蚀无源波导的变换结构，降低了器件的转换损耗及回波损耗。结合后续制作的器件，对接界面插入损耗可以小于1.5 dB。 完成了多种多波长阵列DFB激光器及高性能DFB激光器的制作，包括16通道200 GHz，300 GHz间隔1550 nm波段阵列激光器，4通道20 nm间隔1310 nm波段阵列激光器，双八分之一相移激光器，非对称三相移激光器，变节距啁啾调制激光器等，广泛的验证了压印工艺的可靠性及适应性。研究了阵列器件的热调谐特性及热串扰特性，取得了器件热特性数据。为下一步编写阵列器件波长控制程序取得了实验数据。依据2012年度InP基AWG测试结果，对AWG的结构设计数据进行了修正并重新设计。修正设计后制作的通道波长间隔为1.56 nm，通道中心波长1549.7 nm，串扰小于1.5dB。完成了四通道阵列激光器与多模干涉结构合波器（MMI）的单片集成芯片的设计、制作与测试， 针对集成芯片完成了器件的封装设计。由于集成芯片管脚非常多，直流偏置，微波信号，热调谐信号互相之间存在耦合，串扰，布线交叉等。为此采用了多层过渡板结构，有效的将各个管脚分开，降低电学串扰。搭建芯片测试平台系统。完成了多波长半导体微环激光器的的制备与测试，采用InP基多量子阱激光器外延材料结构，利用感应耦合等离子体（ICP）干法刻蚀技术和SiO2钝化工艺，研制了基于环形谐振腔的双波长半导体激光器样品，实现了激光光源的单片集成。改变激光器的注入电流，可调节峰值波长与波长间隔。对InP基长波长10 Gb/s 单片集成OEIC光接收机进行了电路建模、共基极和共发射极OEIC集成电路设计、制备与测试，跨组放大器达到10 Gb/s传输速率，PIN探测器带宽实现7.8 GHz，OEIC器件传输速率达到4 Gb/s，眼图清晰。探索了Si基准单片光发射OEIC方案的可行性。该方案是在Si片衬底上湿法腐蚀出沟槽，并在沟槽里溅射金属层，将FP激光器芯片贴装在沟槽里，通过金属层将电极引出，与Si CMOS 激光驱动电路实现准单片集成。 关键词：光子集成芯片 多波长微环激器 多波长阵列激光器 InP基长波长10 Gb/s单片集成OEIC光接收机 纳米压印 Abstract：The coupling efficiency and return loss between deep ridge waveguide and shallow ridge waveguide has been analyzed theoretically，an improved structure with taper has been proposed and fabricated. The result of the made-up device indicates that the insert loss on the butt-joint interface is less than 1.5 dB. Various kinds of multi-wavelength laser array and high-performance DFB lasers has been fabricated which confirmed that the nanoimprint technology is flexible enough for a range of abilities. The thermal tuning and thermal crosstalk attributes are studied which could be used to control the wavelength tuning of the laser array. Modification and redesigning on AWG is proceed based on the test result of the device fabricated in last year. The new device according to the modified design shows the result 1.56 nm wavelength interval and centre wavelength 1 549.7 nm which meet the 200 GHz c-band standard. The design， fabrication and test of the monolithic chip of four channel laser array integrated with MMI combiner are completed. The packing design of the chip is also finish. As there are too many pins of the monolithic chip of which the DC offset， the microwave signal， thermal tuning signal would bring in coupling， crosstalk wiring cross effects each other if use the single layer board， the multilayer transition board is employed to separate the pins， reduce the electrical crosstalk. The chip test platform is also established for this device. The fabrication and test of the dual wavelength semiconductor laser based on micro-ring is also accomplished， which introduce the InP MQW laser wafer， adopt ICP dry etch and SiO2 passivation technology. The sample achieved laser monolithic. The peak wavelength and wavelength interval can be tuned by turn the injection current of this laser. The circuit modeling of the 10 GB/s monolithic OEIC optical receiver based on the InP material is studied. The common base and common emitter OEIC is designed， fabricated and tested. The transmission speed of the TIA is reached 10 GB/s， the bandwidth of the PIN 7.8 G Hz， and the transmission speed of the OEIC component reached 4 GB/s. The eye pattern is clear. The practicality of the quasi monolithic OEIC transmitter based on Si is also explored. We can sputter metal on the ditch corroded by wet etch on Si，and mount the FP laser chip on it. By wiring the electrode to the Si substrate， the quasi monolithic integrated with the Si CMOS laser driver circuit could be achieved. Key Words：Photonic integrated circuit；Multi-wavelength micro-ring laser；Multi-wavelength semiconductor laser Array 10Gb/s monolithic integrated OEIC receiver based on InP nanoimprint technology butt-joint；Array waveguide gratings 阅读全文链接（需实名注册）：http：//www.nstrs.cn/xiangxiBG.aspx？id=49360&flag=1